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MGY25N120D spec.: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D similare
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- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Datasheet şi Spec
Producător : ON Semiconductor
Ambalare : TO-3PBL
Pin : 3
Temperatura : Min 0 °C | Max 0 °C
Marime : 188 KB
Cerere : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Descarca PDF