Cale:OKDatasheet > Semiconductor Date > NTE Electronic Datasheet > NTE570
NTE570 spec.: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Cale:OKDatasheet > Semiconductor Date > NTE Electronic Datasheet > NTE570
NTE570 spec.: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Producător : NTE Electronic
Ambalare :
Pin : 2
Temperatura : Min -40 °C | Max 150 °C
Marime : 15 KB
Cerere : Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.