Cale:OKDatasheet > Semiconductor Date > NTE Electronic Datasheet > NTE3311
NTE3311 spec.: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Cale:OKDatasheet > Semiconductor Date > NTE Electronic Datasheet > NTE3311
NTE3311 spec.: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Producător : NTE Electronic
Ambalare :
Pin : 3
Temperatura : Min 0 °C | Max 150 °C
Marime : 19 KB
Cerere : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.