MTW33N10E spec.: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW33N10E similare

MTW32N20E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW32N25E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW32N25E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW33N10E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW35N15E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW33N10E Datasheet şi Spec

Producător : Motorola

Ambalare : TO-247AE

Pin : 4

Temperatura : Min -55 °C | Max 150 °C

Marime : 249 KB

Cerere : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole