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MTB4N80E1 spec.: TMOS E-FET high energy power FET D2PAK for surface mount
MTB4N80E1 similare
- MTB4N80E1
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB4N80E1 Datasheet şi Spec
Producător : Motorola
Ambalare : DPAK
Pin : 4
Temperatura : Min -55 °C | Max 150 °C
Marime : 175 KB
Cerere : TMOS E-FET high energy power FET D2PAK for surface mount
MTB4N80E1 Descarca PDF