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MTB1N100E spec.: TMOS E-FET high energy power FET
MTB1N100E Datasheet şi Spec
Producător : Motorola
Ambalare : DPAK
Pin : 4
Temperatura : Min -55 °C | Max 150 °C
Marime : 281 KB
Cerere : TMOS E-FET high energy power FET
MTB1N100E Descarca PDF