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BUL45D2 spec.: High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 similare
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- BUL45D2
- High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 Datasheet şi Spec
Producător : Motorola
Ambalare :
Pin : 4
Temperatura : Min -65 °C | Max 150 °C
Marime : 488 KB
Cerere : High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 Descarca PDF