BC263 similare

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC263 Datasheet şi Spec

Producător : Micro Electronics 

Ambalare : TO-18 

Pin : 3 

Temperatura : Min -65 °C | Max 200 °C

Marime : 103 KB

Cerere : 360mW PNP high gain low noise silicon planar epitaxial transistor 

BC263 Descarca PDF