Cale:OKDatasheet > Semiconductor Date > Micro Electronics Datasheet > BC263
BC263 spec.: 360mW PNP high gain low noise silicon planar epitaxial transistor
Cale:OKDatasheet > Semiconductor Date > Micro Electronics Datasheet > BC263
BC263 spec.: 360mW PNP high gain low noise silicon planar epitaxial transistor
Producător : Micro Electronics
Ambalare : TO-18
Pin : 3
Temperatura : Min -65 °C | Max 200 °C
Marime : 103 KB
Cerere : 360mW PNP high gain low noise silicon planar epitaxial transistor