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P4KE82 spec.: 66.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE82 similare
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P4KE82 Datasheet şi Spec
Producător : MDE Semiconductor
Ambalare :
Pin : 2
Temperatura : Min -55 °C | Max 175 °C
Marime : 928 KB
Cerere : 66.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE82 Descarca PDF