Cale:OKDatasheet > Semiconductor Date > JGD Datasheet > 1N5399
1N5399 spec.: 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V.
Cale:OKDatasheet > Semiconductor Date > JGD Datasheet > 1N5399
1N5399 spec.: 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V.
Producător : JGD
Ambalare : DO-15
Pin : 2
Temperatura : Min -65 °C | Max 125 °C
Marime : 161 KB
Cerere : 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V.