Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4PH30K
IRG4PH30K spec.: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4PH30K
IRG4PH30K spec.: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Producător : IR
Ambalare : TO-247AC
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 177 KB
Cerere : Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A