IRG4PH20KD spec.: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A

IRG4PH20KD similare

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IRG4PH20KD Datasheet şi Spec

Producător : IR

Ambalare : TO-247AC

Pin : 3

Temperatura : Min -55 °C | Max 150 °C

Marime : 303 KB

Cerere : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A