Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4PC30KD
IRG4PC30KD spec.: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4PC30KD
IRG4PC30KD spec.: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Producător : IR
Ambalare : TO-247AC
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 195 KB
Cerere : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A