IRG4BC30K-S spec.: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A

IRG4BC30K-S similare

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IRG4BC30K-S Datasheet şi Spec

Producător : IR

Ambalare : DDPak

Pin : 3

Temperatura : Min -55 °C | Max 150 °C

Marime : 177 KB

Cerere : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A