Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4BC30FD
IRG4BC30FD spec.: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRG4BC30FD
IRG4BC30FD spec.: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
Producător : IR
Ambalare :
Pin : 3
Temperatura : Min -55 °C | Max 150 °C
Marime : 453 KB
Cerere : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A