IRFIB7N50A spec.: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A

IRFIB7N50A similare

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IRFIB7N50A Datasheet şi Spec

Producător : IR

Ambalare : TO-220 FULLPAK

Pin : 3

Temperatura : Min -55 °C | Max 150 °C

Marime : 105 KB

Cerere : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A