Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRF9410
IRF9410 spec.: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
IRF9410 similare
- IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9410 Datasheet şi Spec
Producător : IR
Ambalare : SO
Pin : 8
Temperatura : Min -55 °C | Max 150 °C
Marime : 125 KB
Cerere : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
IRF9410 Descarca PDF