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IRF5810 spec.: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
IRF5810 similare
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IRF5810 Datasheet şi Spec
Producător : IR
Ambalare : TSOP
Pin : 6
Temperatura : Min -55 °C | Max 150 °C
Marime : 228 KB
Cerere : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
IRF5810 Descarca PDF