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IRF5805 spec.: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V
IRF5805 similare
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IRF5805 Datasheet şi Spec
Producător : IR
Ambalare : TSOP
Pin : 6
Temperatura : Min -55 °C | Max 150 °C
Marime : 138 KB
Cerere : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V
IRF5805 Descarca PDF