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IRF530N spec.: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N similare
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
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- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
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- IRF520NS
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- IRF520VL
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- IRF520VS
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- IRF5210
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IRF530N Datasheet şi Spec
Producător : IR
Ambalare :
Pin : 3
Temperatura : Min -55 °C | Max 175 °C
Marime : 233 KB
Cerere : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N Descarca PDF