Cale:OKDatasheet > Semiconductor Date > IR Datasheet > IRF3808S
IRF3808S spec.: HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A
IRF3808S similare
- IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3808S Datasheet şi Spec
Producător : IR
Ambalare : DDPak
Pin : 3
Temperatura : Min -55 °C | Max 175 °C
Marime : 177 KB
Cerere : HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A
IRF3808S Descarca PDF