Cale:okDatasheet > Semiconductor Date > IR Datasheet > IR-152
D500N40PTC ST700C12L3 ST330C04L1 ST180S16M2L 307URA200P3 SD253R12S20MBV ST3230C18R2 ST280CH04C2 302U5A IRF7807V SD200R20PBC ST2100C38R2L IRFB59N10D ST2100C40R3L ST083S12PFK2 70U20 47LR60 IRFS17N20D SD103N14S20MBC 309U250P5 SD253N08S20MV 301UR80P2 305U120P3 JANTX2N6770 SD203N10S10
| Partea Nu | Producător | Cerere |
|---|---|---|
| 40EPS16 | IR | Input rectifier diode |
| 303UR250P3 | IR | Standard recovery diode |
| SD500N40PTC | IR | Standard recovery diode |
| ST700C12L3 | IR | Phase control thyristor |
| ST330C04L1 | IR | Phase control thyristor |
| ST180S16M2L | IR | Phase control thyristor |
| 307URA200P3 | IR | Standard recovery diode |
| SD253R12S20MBV | IR | Fast recovery diode |
| ST3230C18R2 | IR | Phase control thyristor |
| ST280CH04C2 | IR | Phase control thyristor |
| 302U5A | IR | Standard recovery diode |
| IRF7807V | IR | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm |
| SD200R20PBC | IR | Standard recovery diode |
| ST2100C38R2L | IR | Phase control thyristor |
| IRFB59N10D | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A |
| ST2100C40R3L | IR | Phase control thyristor |
| ST083S12PFK2 | IR | Inverter grade thyristor |
| 70U20 | IR | Standard recovery diode |
| 47LR60 | IR | Standard recovery diode |
| IRFS17N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A |
| SD103N14S20MBC | IR | Fast recovery diode |
| 309U250P5 | IR | Standard recovery diode |
| SD253N08S20MV | IR | Fast recovery diode |
| 301UR80P2 | IR | Standard recovery diode |
| 305U120P3 | IR | Standard recovery diode |
| JANTX2N6770 | IR | HEXFET power mosfet |
| SD203N10S10MSC | IR | Fast recovery diode |
| IRFR9024NTR | IR | Power MOSFET, 55V, 11A |
| IRFSL4710 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A |
| 72UFR60A | IR | Standard recovery diode |