Cale:OKDatasheet > Semiconductor Date > Cree Datasheet > W4TRD0R-0D00

W4TRD0R-0D00 spec.: Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD0R-0D00 similare

  • W4TRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4TRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD0R-0D00 Datasheet şi Spec

Producător : Cree 

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Cerere : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4TRD0R-0D00 Descarca PDF