Cale:okDatasheet > Semiconductor Date > JGD Datasheet > JGD-6
105 P4KE22 SR306 BAS20 1N748 1N4757 SMAJ130C 1N4101 FR307G P6KE180A 1N4757C 1N5918D F1A4G SMBJ30A SMAJ17CA MMBZ5234B 1N5938 HER605 1N5950D 1N987A SMAJ120CA SMBJ22A KBP210G ZMM5259A SMAJ22 1N5540B HER108L BZX84C18
Partea Nu | Producător | Cerere |
---|---|---|
3EZ4.3D3 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-3% tolerance. |
1N5918B | JGD | 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. +-5% tolerance. |
1N4105 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 11V. |
P4KE22 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. |
SR306 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 3.0 A. |
BAS20 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 100mA. |
1N748 | JGD | 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% standard tolerance. |
1N4757 | JGD | 1W zener diode. Nominal zener voltage 51V. 10% tolerance. |
SMAJ130C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 130 V. Bidirectional. |
1N4101 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. |
FR307G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
P6KE180A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. |
1N4757C | JGD | 1W zener diode. Nominal zener voltage 51V. 2% tolerance. |
1N5918D | JGD | 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. +-1% tolerance. |
F1A4G | JGD | 1.0 A glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400 V. |
SMBJ30A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 36.8 V (max). Test current 1.0 mA. |
SMAJ17CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional. |
MMBZ5234B | JGD | Surface mount zener diode. Nominal zener voltage 6.2V, test current 20.0mA. |
1N5938 | JGD | 1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-20% tolerance. |
HER605 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
1N5950D | JGD | 1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-1% tolerance. |
1N987A | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-10% tolerance. |
SMAJ120CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional. |
SMBJ22A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 24.4 V (min), 26.9 V (max). Test current 1.0 mA. |
KBP210G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
ZMM5259A | JGD | Surface mount zener diode. Nominal zener voltage 39 V. Test current 3.2 mA. +-3% tolerance. |
SMAJ22 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
1N5540B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
HER108L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
BZX84C18 | JGD | 350mW zener diode, 18V |